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MRF6VP121KHR6 MRF6VP121KHSR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies
between 965 and 1215 MHz. These devices are suitable for use in pulsed
applications.
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Typical Pulsed Performance: VDD
=50Volts,IDQ
= 150 mA, Pout
=
1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128
μsec,
Duty Cycle = 10%
Power Gain ? 20 dB
Drain Efficiency ? 56%
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Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak
Power
Features
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Characterized with Series Equivalent Large--Signal Impedance Parameters
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Internally Matched for Ease of Use
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Qualified Up to a Maximum of 50 VDD
Operation
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Integrated ESD Protection
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Designed for Push--Pull Operation
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Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
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RoHS Compliant
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In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
(1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6VP121KH
Rev. 3, 4/2010
Freescale Semiconductor
Technical Data
965--1215 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
MRF6VP121KHR6
MRF6VP121KHSR6
CASE 375D--05, STYLE 1
NI--1230
MRF6VP121KHR6
PARTS ARE PUSH--PULL
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP121KHSR6
(Top View)
GSA
31RFoutA/VDSA
GSB
42RFoutB/VDSB
RFinA/V
RFinB/V
Figure 1. Pin Connections
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Freescale Semiconductor, Inc., 2009--2010.
All rights reserved.
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